Recruit Detail
Find out more about the work we do, the experience and skills we can bring to the table, and our terms and conditions.
Company Name
Sumitomo Electric Device Innovation Co., Ltd.
Job Type
[Yamanashi] GaN-HEMT Device Development Engineer (Core Candidate)
Work Detail
Position Overview We are seeking a Device Technology Engineer for GaN HEMT (Gallium Nitride High Electron Mobility Transistor) for mobile phone base stations. You will work closely with process and production engineers, providing feedback and characterization of prototype devices, maximizing the characteristics, improving yield, and bringing mass-produced devices to market. Specific Job Responsibilities ■ Main Tasks ・Characterization of prototype devices (high-frequency characteristics, DC characteristics, reliability) and feedback ・Consultation with process and production engineers regarding device characteristic development and yield improvement ・Mass production startup, failure analysis, and quality stabilization ・Optimization of device characteristics according to customer requirements ■ Technical Areas Covered ・Compound semiconductors: GaN, AlGaN, AlN, GaN on SiC, etc. ・Device Structure: HEMT structure, field plate, gate insulating film, etc. ・Application: Power transistors for post-5G base stations ■ Development Flow (Guideline) Customer/Internal Requirements → Device Evaluation → Process Technology Collaboration → Prototyping → Evaluation → Productization/Mass Production Deployment (Scope of Change: Company-defined tasks)
Ideal Profile
Required Conditions (MUST) Applicants must meet one of the following criteria: * Possess a foundation in basic academic subjects: Those who have majored in physics/materials science/electrical engineering/electronic engineering/applied physics, etc. at a university or graduate school (Even if your work experience is outside of development in this field, for example, quality assurance, development procurement, or development in a different field, you are eligible if you have a willingness to catch up on basic knowledge). * Have practical experience related to compound semiconductors/high-frequency devices: Experience in device development of GaN/GaAs/SiC, crystal growth, process development, or high-frequency evaluation. * Have research experience: Master's or doctoral thesis experience related to compound semiconductors, high-frequency devices, or semiconductor materials science. -Master, Postdoctoral experience Preferred Qualifications (WANT) Candidates who meet any of the following criteria are especially welcome: * Experience in design, evaluation, and process of semiconductor devices (Si, compound or otherwise) * Experience in high-frequency (GHz band) measurement and electromagnetic field simulation (ADS, MWO, etc.) * Ability to read and communicate technical documents in English or Chinese Desired Candidate Profile * Ability to coordinate physical properties, structure, process, evaluation, and customer requirements through communication * Enjoy electronic devices as a "mixed martial arts" of materials, physical properties, and communication * Ability to commit to a long-term project (we offer an environment where you can take on challenges at your own pace)
What we especially look for in a PhD or postdoctoral fellow
• Candidates with research experience: Master's/doctoral thesis topics related to compound semiconductors, high-frequency devices, or semiconductor properties, and postdoctoral experience.
Work Location
1000 Kamisuki-Aihara, Showa-cho, Nakakoma-gun, Yamanashi Prefecture 409-3883 Nearest station to Yamanashi office: JR Minobu Line, Kokubo Station (Scope of change: Location determined by the company)
Phd. Stating Salary
Annual Salary: ¥4,500,000 - ¥8,000,000 / Monthly Salary: ¥280,000 - ¥400,000 *Determined according to company regulations, taking into account experience and abilities. Salary Increase: Once a year (June) Bonus: Twice a year (June and December) *2025 actual: 5.3 months Allowances: Commuting allowance, overtime allowance, family allowance, meal allowance, telecommuting allowance
Selection Flow
Selection process: Document screening → Interviews (2-3 times) → Job offer *SPI test will be administered during the selection process.